mar. 2002 FS100KMJ-03F outline drawing dimensions in mm to-220fn mitsubishi nch power mosfet FS100KMJ-03F high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. v v a a a a a w c c v g 30 20 100 400 100 100 400 30 C 55 ~ +150 C 55 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 10 h ac for 1 minute, terminal to case typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v dss v gss i d i dm i da i s i sm p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit ? 4v drive ? v dss .................................................................................. 30v ? r ds (on) (max) ............................................................. 4.0m ? ? i d ....................................................................................... 100a ? integrated fast recovery diode (typ.) ............. 80ns ? ? ? 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? ? gate ? drain ? source
mar. 2002 v (br) dss v (br) gss i dss i gss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr mitsubishi nch power mosfet FS100KMJ-03F high-speed switching use v v a a v m ? m ? v s pf pf pf ns ns ns ns v c/w ns 30 20 1.0 1.5 3.1 4.2 0.16 120 7600 2300 1000 30 170 520 290 1.0 80 100 10 2.0 4.0 5.7 0.20 1.5 4.17 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate- source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v i g = 100 a, v ds = 0v v ds = 30v, v gs = 0v v gs = 20v, v ds = 0v i d = 1ma, v ds = 10v i d = 50a, v gs = 10v i d = 50a, v gs = 4v i d = 50a, v gs = 10v i d = 50a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 15v, i d = 50a, v gs = 10v, r gen = r gs = 50 ? i s = 50a, v gs = 0v channel to case i s = 50a, dis/dt = C 50a/ s
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